Electrostatic Tuning of Ionic Charge in SiO2 Dielectric Thin Films
ECS Journal of Solid State Science and Technology, 2022 11 063010
Here we show the successful incorporation of K+, Rb+ and Cs+ ions into SiO2 thin films using an electric field and temperature-assisted embedding process. A comprehensive model of ion migration has been developed to show the dependency of ion kinetics on temperature and surface fields.
Extracting band-tail interface state densities from measurements and modelling of space charge layer resistance
Solar Energy Materials and Solar Cells, 2021 (Top Silicon PV conference contribution)
Here we describe a new method to estimate the interface state density at band tails in dielectric-semiconductor interfaces. For this we use sheet resistance measurements and TCAD predictions of conductivity in space charge layers.
Unravelling the silicon-silicon dioxide interface under different operating conditions
Solar Energy Materials and Solar Cells, 2021
Here we investigate the recombination at the Si-SiO2 interface by varying temperature, injection-level, and dielectric charge. Using the extended Shockley-Read-Hall recombination model we provide the first report of the interface defect parameters as a funciton of temperature, including an observation of temperature-dependence in the capture cross-sections.