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The Interfaces Lab aims to understand and develop thin-film materials that can improve next-generation optoelectronic devices and integrated circuits.
Our focus lies on the dynamics of charge carriers in metal-dielectric and dielectric-semiconductor interfaces. Such interfaces are fundamental to the operation of most electronic devices, from simple diodes and solar cells, to complex 2D field effect transistors and memories. We explore a range of metal oxide and nitride functional dielectric materials, which can serve as a platform for tailoring and controlling semiconductor devices.
This young group was established in 2019 by Dr Ruy Sebastian Bonilla. It brings together the world-leading work in photovoltaics carried out by the Semiconductor and Silicon PV group, with a new research area on applied dielectric materials and interfaces. We're also happy to engage in new areas where semiconductor-dielectric interfaces can affect or limit device performance, so please drop us a line if you'd like to collaborate.
Exceptional Surface Passivation Arising from Bis(trifluoromethanesulfonyl)-Based Solutions
ACS Applied Electronic Materials, 2019
The surface properties of many inorganic electronic materials (e.g., MoS2, WSe2, Si) can be substantially modified by treatment with the superacid bis(trifluoromethane)sulfonimide (TFSI). Here we find more generally that solutions based on molecules with trifluoromethanesulfonyl groups, including TFSI, give rise to excellent room temperature surface passivation, with the common factor being the presence of CF3SO2 groups and not the solution’s acidity.
Scalable Techniques for Producing Field-Effect Passivation in High-Efficiency Silicon Solar Cells
IEEE Journal of Photovoltaics 9 (1), 26-33, 2019
This paper presents techniques to tailor and optimize the field-effect passivation of silicon surfaces using the deposition and field-assisted migration of potassium ions.
