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Solar RRL, 2025. Laser Enhanced Contact Optimisation (LECO) is a widely adopted technique for improving the metal-semiconductor interface in silicon solar cells. In this work, we have found that reverse and forward bias stress at high temperatures significantly degrade the p+-Ag contact, leading to increased series resistance and deteriorated current-voltage characteristics, ultimately compromising cell reliability. These findings suggest that while LECO improves performance, more research is needed to understand and prevent long-term reliability issues.

EES Solar, 2025. We propose a method to measure contact recombination in silicon solar cells - a major efficiency loss - using photoluminescence imaging and Fourier analysis. The technique analyses periodic metal contact patterns without requiring special designs, making it practical for industrial use. By filtering noise, enhancing signals and simulating the device, we quantify recombination losses. The method was tested on cells with different metallisation pastes, successfully identifying performance differences. This approach helps improve cell performance and supports renewable PV energy

Advanced Science, 2024, 2410179. Solar photovoltaic devices are a promising technology underpinning the world’s renewable energy transformation. In this work, a symmetric dopant-free crystalline Si solar cell, using amorphous TiOx as both front and rear contact, is demonstrated. Ex situ and in situ X-ray photoelectron spectroscopy measurements revealed that the bipolar carrier selectivity of TiOx is associated with the different amount of negative fixed charge generated during the nanolayer growth in atomic layer deposition.
 

Appl. Phys. Lett. 123, 261106 (2023). Detecting hydrogen in solar cell structures is key to understanding their performance and degradation. This study uses time-of-flight elastic recoil detection (ToF-ERD) to accurately identify hydrogen and deuterium in a poly-Si/SiOx contact. By analysing how particles scatter when hit with chlorine ions, the method provides clear, artifact-free data on hydrogen distribution. The technique offers detailed depth profiles of elements like silicon, nitrogen, oxygen, and hydrogen, helping researchers understand hydrogen's role in cell efficiency and durability.