Silicon solar cells capture solar energy when light is absorbed near the cell’s surface. Efficiency in the most advanced silicon solar cells is limited by recombination of photo-excited electron-hole pairs at surfaces and interfaces. The surface of the cell represents a major material defect where loss of charge carriers may occur. Future generations of industrial high efficiency solar cells will require cost effective techniques for producing semiconductor/dielectric interfaces with very low rates of recombination. The process of creating these low recombination interfaces is known as surface passivation and its development is critical to the next generation solar cells. Existing work in the lab has produced record breaking surface passivation using charge extrinsically added to dielectric coatings. The problem, however, is that the passivation produced is not stable over a period of years as required for solar cells in the field. This area aims to explore a new generation of cost effective dielectric coatings that provide optimal passivation using the technologies proposed and patented by the group, as well as improving the optical qualities over current industrial films. This involves deposition of dielectrics using semiconductor facilities and characterisation of their properties using electronic techniques. These films will then be extrinsically treated to exploit their passivation characteristics.