Advanced characterisation of semiconductor interfaces

Accurate and effective characterisation of device interfaces is essential for physcial understanding, structural design, and manufacturing process control. It ultimately impacts performance, particularly of devices where charge flow across interfaces strongly influences the operation. This is specially important in optoelectronic devices. At the Interfaces Lab we aim to improve the current understanding and develop new techniques to characterise such interfaces. Currently, a large part of our work involves Electron Beam Induced Current (EBIC), Scanning Transmission Electron Microscopy (STEM), and Atom Probe Tomography (APT).

 

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EBIC of a selective emitter in a silicon solar cell.