Shea (Xinya) Niu
Project: Exploiting Field-Effect in 2D Materials
DPhil student
Xinya (Shea) Niu completed her bachelor degree of materials science and engineering at University of Chinese Academy of Sciences, China. Her undergraduate project involved epitaxy structure of InP/InGaAs wide-band PIN photodiodes.
Her DPhil project focuses on developing a exploiting field effect of 2D semiconductors such as MoS2 using permanently built electric fields. She is going to focus on synthesis, processing, and customization of the interface between the substrate and such topical 2D semiconductors.
